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DMN2053UFDB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Device
NChannel
BVDSS 20V
RDS(ON) Max
35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V
ID MAX TA = +25°C
4.6A 4.2A
PCB Footprint of 4mm2 Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Maximum Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) An automotive-compliant part is available under separate
datasheet (DMN2053UFDBQ)
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, which makes it ideal for high-efficiency power management applications.