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DMN2055UQ Datasheet N-channel MOSFET

Manufacturer: Diodes Incorporated

Overview: Product Summary BVDSS 20V RDS(ON) Max 38mΩ @ VGS = 4.5V 45mΩ @ VGS = 2.5V ID Max TA = +25°C 4.8A 4.

General Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Applications  General purpose interfacing switches  Power management functions SOT23 DMN2055UQ N-CHANNEL ENHANCEMENT MODE MOSFET

Key Features

  • Low On-Resistance.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DIODES™ DMN2055UQ is suitable for automotive.

DMN2055UQ Distributor