Datasheet Summary
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 30V
RDS(ON) Max
3Ω @ VGS = 4.5V 7Ω @ VGS = 2.5V
ID Max TA = +25°C
350 mA
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
- Motor controls
- Power management functions
- DC-DC converters
- Backlighting
SOT563
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DIODES™ DMN33D8LVQ...