DMN61D9UDWQ
DMN61D9UDWQ is DUAL N-CHANNEL ENHANCEMENT MODE MOSFET manufactured by Diodes Incorporated.
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Motor Control
- Power Management Functions
SOT363
G1
Features and Benefits
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Ultra-Small Surface Mount Package
- ESD Protected
- Totally Lead-Free & Fully Ro HS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- The DMN61D9UDWQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities. https://.diodes./quality/product-definitions/
Mechanical Data
- Case: SOT363
- Case Material: Molded Plastic. “Green” Molding pound.
UL Flammability Classification Rating 94V-0
- Moisture Sensitivity: Level 1 per J-STD-020
- Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
- Terminal Connections: See Diagram
- Weight: 0.006 grams (Approximate)
D1
D2
D2
G1
S1
G2
ESD PROTECTED
Top View
Gate Protection Diode
S1
Q1 N-Channel
Gate Protection...
