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DMN61D9UDW - N-Channel MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Motor Control Power Management Functions SOT363

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected Up To 2kV.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data.
  • Case: SOT363.
  • Case Material: Molded Plastic. “Green” Mo.

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NEW PRNOEDWUCPTRODUCT DMN61D9UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 60V RDS(ON) max 2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V ID max TA = +25°C 350mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  Motor Control  Power Management Functions SOT363 Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected Up To 2kV  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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