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DMN61D9UDWQ - DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Motor Control Power Management Functions SOT363 G1

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface Mount Package.
  • ESD Protected.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN61D9UDWQ is suitable for automotive.

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Datasheet preview – DMN61D9UDWQ

Datasheet Details

Part number DMN61D9UDWQ
Manufacturer Diodes Incorporated
File Size 724.44 KB
Description DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Datasheet download datasheet DMN61D9UDWQ Datasheet
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Full PDF Text Transcription

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NEW PRODUCT DMN61D9UDWQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 5.0V 2.5Ω @ VGS = 2.5V 3.5Ω @ VGS = 1.8V ID TA = +25°C 318mA 284mA 240mA Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Motor Control  Power Management Functions SOT363 G1 Features and Benefits  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  Ultra-Small Surface Mount Package  ESD Protected  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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