Datasheet Summary
Green
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 68V
RDS(ON) 8.0mΩ @ VGS = 10V
ID TC = +25°C
100A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features
- 100% Unclamped Inductive Switch (UIS) Test in Production
- Low Input Capacitance
- Low Input/Output Leakage
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured...