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DMN6010SCTB - 60V N-Channel MOSFET

General Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.

Motor Controls Engine Management Systems Body Control Electroni

Key Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green DMN6010SCTB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 10mΩ @ VGS = 10V ID Max TC = +25°C 128A Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.  Motor Controls  Engine Management Systems  Body Control Electronics  DC-DC Converters Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Low RDS(on) – Minimizes Power Losses  Low Qg – Minimizes Switching Losses  Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.