DMN601VK
DMN601VK is N-Channel MOSFET manufactured by Diodes Incorporated.
Features
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Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/Ro HS pliant (Note 2) ESD Protected Up To 2k V "Green" Device (Note 4)
D G B C A
SOT-563 Dim A B C D G H K L M
Drain
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11
Mechanical Data
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Case: SOT-563 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish
- Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate)
All Dimensions in mm
D2
G1
S1
Body Diode Gate
S2
G2
D1
Gate Protection Diode
ESD protected up to 2k V
Source
EQUIVALENT CIRCUIT PER ELEMENT
Maximum Ratings
Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1)
@ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RθJA Tj, TSTG Value 60 ±20 305 800 250 500 -65 to +150 Units V V m A m W °C/W °C
Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature...