Download DMN601VK Datasheet PDF
Diodes Incorporated
DMN601VK
DMN601VK is N-Channel MOSFET manufactured by Diodes Incorporated.
Features - - - - - - - - - - Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/Ro HS pliant (Note 2) ESD Protected Up To 2k V "Green" Device (Note 4) D G B C A SOT-563 Dim A B C D G H K L M Drain Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10 Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18 Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11 Mechanical Data - - - - - - - - Case: SOT-563 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking: See Page 2 Ordering & Date Code Information: See Page 2 Weight: 0.006 grams (approximate) All Dimensions in mm D2 G1 S1 Body Diode Gate S2 G2 D1 Gate Protection Diode ESD protected up to 2k V Source EQUIVALENT CIRCUIT PER ELEMENT Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current (Note 1) @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Continuous Pulsed (Note 3) ID Pd RθJA Tj, TSTG Value 60 ±20 305 800 250 500 -65 to +150 Units V V m A m W °C/W °C Total Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient Operating and Storage Temperature...