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DMN601VKQ Datasheet Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Diodes Incorporated

Overview: DMN601VKQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 60V RDS(ON) Max 2Ω @ VGS = 10V 3Ω @ VGS = 4.

General Description

and Applications This MOSFET is designed to meet the stringent requirements of automotive applications.

It is qualified to AEC-Q101, supported by a PPAP, and is ideal for use in:  General-purpose interfacing switches  Power-management functions  Analog switches

Key Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • Ultra-Small Surface-Mount Package.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • The DMN601VKQ is suitable for automotive.

DMN601VKQ Distributor