Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3)
D G B C A
SOT-563 Dim A B C D G SEE NOTE 1
K H M
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11
H K L M
Mechanical Data.
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DMN600V
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features
· · · · · · · ·
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Note 3)
D G B C A
SOT-563 Dim A B C D G SEE NOTE 1
K H M
Min 0.15 1.10 1.55 0.90 1.50 0.56 0.10 0.10
Max 0.30 1.25 1.70 0.50 1.10 1.70 0.60 0.30 0.18
Typ 0.25 1.20 1.60 1.00 1.60 0.60 0.20 0.11
H K L M
Mechanical Data
· · · · · · · · ·
Case: SOT-563 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminals Connections: See Diagram Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe.
DMN600V Datasheet
