Datasheet Summary
NEW PRODUCT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS -20V
RDS(ON) max
54mΩ @ VGS = -4.5V 90mΩ @ VGS = -1.8V
ID max TA = +25°C
-2.5A -1.8A
Features and Benefits
- Low On-Resistance
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- ESD Protected Up To 3kV
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
- Qualified to AEC-Q101 Standards for High Reliability
- PPAP Capable (Note 4)
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency...