Datasheet Summary
ADVANCED INFORMATION
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS -20V
RDS(ON) MAX
0.75Ω @ VGS = -4.5V 1.05Ω @ VGS = -2.5V 1.5Ω @ VGS = -1.8V
ID TA = +25°C
-0.85A -0.7A -0.6A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- DC-DC converters
- Load switches
- Power management functions
SOT563
Features and Benefits
- Dual P-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully...