Datasheet Summary
Product Summary
BVDSS -30V
RDS(ON) Max
65mΩ @ VGS = -10V 99mΩ @ VGS = -4.5V
ID Max TA = +25°C
-3.9A -3.2A
Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
P-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen- and Antimony-Free. “Green” Device (Note 3)
- For automotive applications requiring specific change control
(i.e. parts qualified to AEC-Q100/101/200,...