DMT10H015SPS Datasheet | Diodes Incorporated

Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 14.5mΩ @ VGS = 10V 19.5mΩ @ VGS = 6V ID MAX TC = +25°C 46A 39A Description This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. Features - 100% Unclamped Inductive Switching (UIS) Test in Production- Ensures More Reliable and Robust End Application - Thermally Efficient Package- Cooler Running Applications - High Conversion Efficiency - Low RDS(ON)- Minimizes On-State Losses - Low Input Capacitance - Fast Switching...