DMT10H015LPS
Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.
Key Features
- V(BR)DSS 100V RDS(ON) Max 16mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V ID TC = +25°C 44A 41A
