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DMT10H015LSS - N-CHANNEL MOSFET

General Description

This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

This device is ideal for use in notebook battery power management and loadswitch.

Backlighting Power Management Functions DC-DC Conve

Key Features

  • 100% Unclamped Inductive Switch (UIS) Test in Production.
  • High Conversion Efficiency.
  • Low RDS(ON).
  • Minimizes On-State Losses.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
  • Halogen and Antimony Free. “Green” Device (Note 3).
  • Qualified to AEC-Q101 Standards for High Reliability.

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Full PDF Text Transcription for DMT10H015LSS (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for DMT10H015LSS. For precise diagrams, and layout, please refer to the original PDF.

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H015LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) Max 16mΩ @ VGS = 10V 18mΩ @ V...

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ET Product Summary V(BR)DSS 100V RDS(ON) Max 16mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V ID TA = +25°C 8.3A 7.9A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test in Production  High Conversion Efficiency  Low RDS(ON) – Minimizes On-State Losses  Low Input Capacitance  Fast Switching Speed  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance.

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