Datasheet Summary
ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 30V
RDS(ON) Max
20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V
ID TC = +25°C
16A 13A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
- Backlighting
- Power Management Functions
- DC-DC Converters
SO-8
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
- Dual N-Channel MOSFET
- Low On-Resistance
- Low Gate Threshold Voltage
- Low Input Capacitance
- Fast Switching Speed
- Low Input/Output Leakage
- 100% Unclamped Inductive Switching (UIS) Test in Production
- Ensures More Reliable and Robust End...