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ADVANACDEVDA INNCFEOIRNMFAOTRIMOANTION
Product Summary
V(BR)DSS 30V
RDS(ON) max 17mΩ @ VGS = 10V 28mΩ @ VGS = 4.5V
ID max TA = +25°C
8.4A
6.8A
Description
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
General Purpose Interfacing Switch Power Management Functions
DMT3020LFDF
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Features
0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.