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DMT3020LSDQ - Dual N-CHANNEL MOSFET

Description

This MOSFET is designed to meet the stringent requirements of automotive applications.

Backlighting Power Management Functions DC-DC Converters SO-8 DMT3020LSDQ DUAL N-CHANNEL ENHANCEMENT M

Features

  • Dual N-Channel MOSFET.
  • Low On-Resistance.
  • Low Gate Threshold Voltage.
  • Low Input Capacitance.
  • Fast Switching Speed.
  • Low Input/Output Leakage.
  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet preview – DMT3020LSDQ

Datasheet Details

Part number DMT3020LSDQ
Manufacturer DIODES
File Size 490.81 KB
Description Dual N-CHANNEL MOSFET
Datasheet download datasheet DMT3020LSDQ Datasheet
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Full PDF Text Transcription

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ADVANCED INNEFWORPRMOADTIUOCNT Product Summary BVDSS 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V ID TC = +25°C 16A 13A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Backlighting  Power Management Functions  DC-DC Converters SO-8 DMT3020LSDQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features  Dual N-Channel MOSFET  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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