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ADVANCED INNEFWORPRMOADTIUOCNT
Product Summary
BVDSS 30V
RDS(ON) Max
20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V
ID TC = +25°C
16A 13A
Description and Applications
This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:
Backlighting Power Management Functions DC-DC Converters
SO-8
DMT3020LSDQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage 100% Unclamped Inductive Switching (UIS) Test in Production
– Ensures More Reliable and Robust End Application Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.