Datasheet Summary
Product Summary
BVDSS 65V
RDS(ON) Max
18mΩ @ VGS = 10V 23mΩ @ VGS = 4.5V
ID Max TA = +25°C
8.1A
7.1A
Description and Applications
This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
- DC-DC Converter
- Adaptor Switch
- Wireless Charging
U-DFN2020-6 (Type F)
65V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
- 100% Unclamped Inductive Switching (UIS) Test in Production- Ensures More Reliable and Robust End Application
- 0.6mm Profile- Ideal for Low Profile Applications
- PCB Footprint of 4mm2
- Low On-Resistance
- ESD...