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DMT6017LDV - 65V N-CHANNEL MOSFET

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Wireless Charging DC-DC Converters Power Management Mechanical Data Case: P

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable and Robust End.

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Datasheet Details

Part number DMT6017LDV
Manufacturer Diodes Incorporated
File Size 563.09 KB
Description 65V N-CHANNEL MOSFET
Datasheet download datasheet DMT6017LDV Datasheet
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DMT6017LDV 65V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 65V RDS(ON) Max 22mΩ @ VGS = 10V 29mΩ @ VGS = 4.5V ID Max TC = +25°C 25.3A 22.1A Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production — Ensures More Reliable and Robust End Application  Low RDS(ON) — Ensures On-State Losses are Minimized  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
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