DMT67M8LCG Datasheet | Diodes Incorporated

60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 5.7mΩ @ VGS = 10V 8.1mΩ @ VGS = 4.5V ID TC = +25°C 64.6A 54.2A Features and Benefits - 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable And Robust End Application - High Conversion Efficiency - Low RDS(ON) - Minimizes On State Losses - Low Input Capacitance - Fast Switching Speed - ESD Protected Gate - Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2) - Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching...