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DMT67M8LCGQ - 60V N-Channel MOSFET

Description

This MOSFET is designed to meet the stringent requirements of Automotive applications.

Synchronous Rectifier Power Management Functions DC-DC Converters V-DFN3333-8 (Type B)

Features

  • 100% Unclamped Inductive Switching (UIS) Test in Production.
  • Ensures More Reliable And Robust End.

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Datasheet Details

Part number DMT67M8LCGQ
Manufacturer DIODES
File Size 443.47 KB
Description 60V N-Channel MOSFET
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DMT67M8LCGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 5.7mΩ @ VGS = 10V 8.1mΩ @ VGS = 4.5V ID TC = +25°C 64.6A 54.2A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in:  Synchronous Rectifier  Power Management Functions  DC-DC Converters V-DFN3333-8 (Type B) Features and Benefits  100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable And Robust End Application  High Conversion Efficiency  Low RDS(ON) – Minimizes On State Losses  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free.
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