DMT67M8LCG
Description
and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) and yet maintain superior switching performance.
Key Features
- 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable And Robust End Application
- High Conversion Efficiency
- Low RDS(ON) - Minimizes On State Losses
- Low Input Capacitance
- Fast Switching Speed
- ESD Protected Gate
- Totally Lead-Free & Fully RoHS pliant (Notes 1 &
- Halogen and Antimony Free. “Green” Device (Note 3)
