DMT67M8LCGQ Datasheet | Diodes Incorporated

60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 5.7mΩ @ VGS = 10V 8.1mΩ @ VGS = 4.5V ID TC = +25°C 64.6A 54.2A Description and Applications This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: - Synchronous Rectifier - Power Management Functions - DC-DC Converters V-DFN3333-8 (Type B) Features and Benefits - 100% Unclamped Inductive Switching (UIS) Test in Production - Ensures More Reliable And Robust End Application - High Conversion Efficiency - Low RDS(ON) - Minimizes On State Losses - Low Input Capacitance - Fast Switching Speed - ESD...