* 100% Unclamped Inductive Switching (UIS) Test in Production
* Ensures More Reliable And Robust End Application
* High Conversion Efficiency
* Low RDS(ON)
* Minimizes On State Losses
* Low Input Capacitance
* Fast Switching Speed
* ESD Protected Gate
* To
DMT67M8LCGQ Datasheet (443.47 KB)
DMT67M8LCGQ
443.47 KB
60v n-channel mosfet.
DMT67M8LCGQ 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(ON) Max 5.7mΩ @ VGS = 10V 8.1mΩ @ VGS = 4.5V ID TC = +25°C 64.6A 5.
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