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DMTH10H025LK3
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max
22mΩ @ VGS = 10V 30mΩ @ VGS = 6V 43.7mΩ @ VGS = 4.5V
ID TC = +25°C
51.7A
44.3A
36.7A
Description
This new-generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.
Applications
Power management functions DC-DC converters Backlighting
Features
Rated to +175°C – Ideal for High Ambient Temperature Environments
100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application
Low RDS(ON) – Minimizes Power Losses Low QG – Minimizes Switching Losses Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free.
DMTH10H025LK3 Datasheet
