Datasheet Summary
Product Summary
BVDSS 100V
RDS(ON) Max 4.3mΩ @ VGS = 10V
ID TC = +25°C
(Note 9)
100A
Green
100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI5060-8
Features
- 100% Unclamped Inductive Switching (UIS) Test in Production Ensures More Reliable and Robust End Application
- High Conversion Efficiency
- Low RDS(ON)- Minimizes On-State Losses
- Low Input Capacitance
- Fast Switching Speed
- Lead-Free Finish; RoHS pliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Description
This new generation N-Channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook...