DMTH10H4M6SPS Datasheet - DIODES

100V N-Channel MOSFET

DMTH10H4M6SPS Features

* Rated to +175C

* Ideal for High Ambient Temperature Environments

* 100% Unclamped Inductive Switching (UIS) Test in Production

* Ensures More Reliable and Robust End Application

* High Conversion Efficiency

* Low RDS(ON)

* Minimizes On-State Losses

* Lo

DMTH10H4M6SPS General Description

and Applications This new generation N-channel enhancement mode MOSFET is designed to minimize RDS(ON) yet maintain superior switching performance. This device is ideal for use in notebook battery power management and load switch. * Motor controls * DC-DC converters * Power managements .

DMTH10H4M6SPS Datasheet (730.20 KB)

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Part number:

DMTH10H4M6SPS

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DIODES ↗

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730.20 KB

Description:

100v n-channel mosfet.
DMTH10H4M6SPS 100V 175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary BVDSS 100V RDS(ON) Max 4.6mΩ @ VGS = 10V ID TC = +25°C 11.

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DMTH10H4M6SPS 100V N-Channel MOSFET DIODES

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DMTH10H4M6SPS Features

DMTH10H4M6SPS General Description

Datasheet Details

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