Datasheet Summary
30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE
Product Summary
BVDSS 30V
RDS(ON) 0.025Ω@VGS = 4.5V
ID TA = +25°C
8.9A
Description
This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that bines the benefits of low onresistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
Applications
- DC-DC Converters
- Power Management Functions
- Disconnect Switches
- Motor Control
Features
- Low On-Resistance
- Fast Switching Speed
- Low Threshold
- Low Gate Drive
- Low Profile SO-8 Package
- Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
- Halogen and Antimony...
