ZXMN3B04N8 Datasheet | Zetex Semiconductors

DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that bines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES - Low on-resistance - Fast switching speed - Low threshold - Low gate drive - Low profile SOIC package SO8 APPLICATIONS - DC - DC converters - Power management functions - Disconnect switches - Motor control ORDERING INFORMATION DEVICE ZXMN3B04N8TA ZXMN3B04N8TC REEL SIZE 7” 13” TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units Top View DEVICE MARKING - ZXMN 3B04 ISSUE 2 - MAY 2004 1 SEMICONDUCTORS ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-source voltage Gate source voltage Continuous drain current @ V GS =4.5V; T A =25°C (b) @ V GS =4.5V; T A =70°C (b) @ V GS =4.5V; T A =25°C (a) Pulsed drain current Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at T A =25°C (a) Linear derating factor Power dissipation at T A =25°C (b) Linear derating factor Operating and storage temperature range T j :T stg (c) SYMBOL V DSS V GS ID LIMIT 30 Ϯ12 8.9 7.3 7.2 UNIT V V A A A A A A W m W/°C W m W/°C °C I DM IS I SM PD PD 45 4.5 45 2 16 3 24 -55 to +150 THERMAL RESISTANCE PARAMETER Junction to ambient (a) SYMBOL R ⍜ JA R ⍜ JA VALUE 62.5 41.4 UNIT °C/W °C/W Junction to ambient (b) NOTES (a) For a device surface mounted on 50mm x 50mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t Յ 10 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width...