Download ZXMN3B04N8 Datasheet PDF
ZXMN3B04N8 page 2
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ZXMN3B04N8 Description

This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that bines the benefits of low onresistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. Applications  DC-DC Converters  Power Management Functions  Disconnect Switches  Motor Control.

ZXMN3B04N8 Key Features

  • Low On-Resistance
  • Fast Switching Speed
  • Low Threshold
  • Low Gate Drive
  • Low Profile SO-8 Package
  • Totally Lead-Free & Fully RoHS pliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Case: SO-8
  • Case Material: Molded Plastic, “Green” Molding pound
  • Moisture Sensitivity: Level 1 per J-STD-020