ZXMN3B04N8 Datasheet 30V N-CHANNEL MOSFET

Manufacturer: Diodes Incorporated

Overview: ZXMN3B04N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET 2.5V GATE DRIVE Product Summary BVDSS 30V RDS(ON) 0.025Ω@VGS = 4.5V ID TA = +25°C 8.

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Datasheet Details

Part number	ZXMN3B04N8
Manufacturer	Diodes Incorporated
File Size	530.05 KB
Description	30V N-CHANNEL MOSFET
Download	ZXMN3B04N8 Download (PDF)

General Description

This new generation of Trench MOSFETs from Diodes Incorporated utilizes a unique structure that combines the benefits of low onresistance with fast switching speed.

This makes them ideal for high efficiency, low voltage, power management applications.

Applications  DC-DC Converters  Power Management Functions  Disconnect Switches  Motor Control

Key Features

Low On-Resistance.
Fast Switching Speed.
Low Threshold.
Low Gate Drive.
Low Profile SO-8 Package.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2).
Halogen and Antimony Free. “Green” Device (Note 3) Mechanical Data.
Case: SO-8.
Case Material: Molded Plastic, “Green” Molding Compound, UL Flammability Classification Rating 94V-0.
Moisture Sensitivity: Level 1 per J-STD-020.
Terminals: Matte Tin Finish Annealed over Copper Leadframe. Sol.

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