Datasheet Summary
11.5 ±0.2 14 ±0.2
Replaces DS6179-4
DMOS+
Gen4 DMOS
Dual Switch IGBT Module
DS6179-5 October 2021 (LN41267)
6 ±0.2
Features
1- 8 ±100.µ2s Short Circuit Withstand
- High4T4he±r0m.2al Cycling Capability
- Soft Pun5ch7T±h0ro.2ugh Silicon
- Isolated AlSiC Base with AlN Substrates
- Lead Free construction
- 55Lo.2w ±V0CE.3(sat) Device 1- 1.8H5igh±0C.2urrent Density
KEY PARAMETERS
6 x O7
VCES
VCE(sat)
- (typ)
(max)
IC(PK) (max)
28 ±0.5
1700V
2s.3crVewing depth 8m00aAx 8
1600A
- Measured at the power busbars, not the auxiliary terminals
1(E) 5(E)
2(C)
12(C)
APPLICATIONS...