DS1258AB Datasheet | Dallas Semiconducotr

.. DS1258Y/AB 128k x 16 Nonvolatile SRAM .maxim-ic. Features - - - - - - - - - - 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte ChipSelect Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 70ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Full ±10% Operating Range (DS1258Y) Optional ±5% Operating Range (DS1258AB) Optional Industrial Temperature Range of -40°C to +85°C, Designated IND PIN ASSIGNMENT CEU CEL DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 GND DQ7 DQ6 DQ5...