DS1258W Datasheet PDF (3.3V 128k x 16 Nonvolatile) | Download Dallas Semiconducotr DS1258W

DS1258W - 3.3V 128k x 16 Nonvolatile

Description

A0 - A16 DQ0 - DQ15 CEU CEL WE OE VCC GND - Address Inputs - Data In/Data Out - Chip Enable Upper Byte - Chip Enable Lower Byte - Write Enable - Output Enable - Power (+3.3V) - Ground DESCRIPTION The DS1258W 3.3V 128k x 16 Nonvolatile SRAM is a 2,097,152-bit, fully static, nonvolatile (NV) SRAM,

Features

10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Separate Upper Byte and Lower Byte Chip Select Inputs Unlimited Write Cycles Low-Power CMOS Read and Write Access Times as Fast as 100ns Lithium Energy Source is Electrically Disconnected to Retain Freshness Until Power is Applied for the First Time Optional Industrial Temperature Range of -40°C to +85°C, Designated IND DataShee Dat.

Datasheet Details

Part number	DS1258W
Manufacturer	Dallas Semiconducotr
File Size	364.68 KB
Description	3.3V 128k x 16 Nonvolatile
Datasheet	DS1258W Datasheet
Additional preview pages of the DS1258W datasheet.

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