• Part: DS1258W
  • Manufacturer: Dallas Semiconducotr
  • Size: 364.68 KB
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DS1258W datasheet preview
DS1258W page 2
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DS1258W Key Features

  • 10-Year Minimum Data Retention in the Absence of External Power Data is Automatically Protected During a Power Loss Sepa
  • A16 DQ0
  • Address Inputs
  • Data In/Data Out
  • Chip Enable Upper Byte
  • Chip Enable Lower Byte
  • Write Enable
  • Output Enable
  • Power (+3.3V)
  • Ground

Related Dallas Semiconducotr Datasheets

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DS1258AB 128k x 16 Nonvolatile SRAM
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DS1250W 3.3V 4096k Nonvolatile SRAM

DS1258W Description

Each NV SRAM has a self-contained lithium energy source and control circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs, the lithium energy source is automatically switched on and write protection is unconditionally enabled to prevent data corruption. DIP-package DS1258W devices can be used in place of solutions which build nonvolatile 128k x 16 memory by...