Datasheet Details
| Part number | DS1350Y |
|---|---|
| Manufacturer | Dallas Semiconductor |
| File Size | 256.01 KB |
| Description | 4096k Nonvolatile SRAM |
| Datasheet |
 DS1350Y Datasheet
|
|
|
General Description
A0 - A18 DQ0 - DQ7
CE WE OE RST BW
VCC GND NC
- Address Inputs - Data In/Data Out - Chip Enable - Write Enable - Output Enable - Reset Output - Battery Warning - Power (+5V) - Ground - No Connect
DESCRIPTION
The DS1350 4096k Nonvolatile SRAMs are 4,194,304-bit, fully static, nonvolatile SRAMs org
Key Features
- 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Power supply monitor resets processor when VCC power loss occurs and holds processor in reset during VCC ramp-up Battery monitor checks remaining capacity daily Read and write access times as fast as 70 ns Unlimited write cycle endurance Typical standby current 50 µA Upgrade for 512k x 8 SRAM, EEPROM or Flash Lithium battery is electrically disconnected to retain freshness until pow.