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DMBT9014 Datasheet

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
DMBT9014
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in pre-amplifier of low level and
low noise.
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
50
45
5
100
225
+150
-55 to +150
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
SOT-23
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ
Collector-Base Breakdown Volatge
BVCBO 50
Collector-Emitter Breakdown Voltage BVCEO 45
Emitter-Base Breakdown Volatge
BVEBO
5
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter Saturation Voltage(1)
DC Current Gain(1)
IEBO
VCE(sat)
VBE(sat)
hFE
-
-
-
200
Transition Frequency
fT 150
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
-
-
-
-
-
-
-
-
-
Max
-
-
-
0.1
0.1
0.3
1
1000
-
Unit
V
V
V
µA
µA
V
V
-
MHz
Test Conditions
IC=100µA, IE=0
IC=1mA, IB=0
IE=100µA, IC=0
VCB=50V, IE=0
VEB=3V, IC=0
IC=100mA, IB=5mA
IC=100mA, IB=5mA
IC=1mA, VCE=5V
IC=10mA, VCE=5V
Classification of hFE
Rank
L
H
Range
200~450
450~1000


Part Number DMBT9014
Description TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Maker Dc Components
Total Page 1 Pages
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