Datasheet Details
| Part number | DP170N03 |
|---|---|
| Manufacturer | Developer Microelectronics |
| File Size | 195.35 KB |
| Description | N-Channel MOSFET |
| Download | DP170N03 Download (PDF) |
|
|
|
| Part number | DP170N03 |
|---|---|
| Manufacturer | Developer Microelectronics |
| File Size | 195.35 KB |
| Description | N-Channel MOSFET |
| Download | DP170N03 Download (PDF) |
|
|
|
DP170N03 Single N Channel Enhancement Power MOSFET Product Summary DP170N03 uses advanced trench technology to provide excellent RDS(ON), low gate charge with a 20V gate rating.
This device is suitable for use as a load switch or in PWM applications.
VDS ID (at VGS=20V) RDS(ON) (at VGS = 10V) RDS(ON) (at VGS = 4.5V) 30 V 13A < 10.5mΩ < 12mΩ * RoHS and Halogen-Free Complaint SOP-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol P-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ=25℃ Pulsedb Drain-Sourse Diode Forward Currenta Avalanche energy, single pulse (L=0.5mH, Rg=25Ω) Maximum Power Dissipationa Operating Junction and Storage Temperature Range VDS VGS ID IDM IS EAS PD TJ,TSTG 30 ±20 13 100 4.0 54 3.1 -55 To 150 Thermal Characteristic Parameter Thermal Resistance,Junction-to-Ambient a Symbol RθJA Limit 60 Unit V V A A A mJ W ℃ Unit ℃/W 2020/10/20 DP170N03_REV1.0_EN www.depuw.com 1
General.
| Part Number | Description |
|---|---|
| DP10N60 | N-Channel MOSFET |
| DP1510 | PWM Control 3A Step-Down Converter |
| DP1800 | Quasi-Resonant PSR CC/CV PWM Power Switch |
| DP1801B | Quasi-Resonant PSR CC/CV PWM Power Switch |
| DP1803 | Quasi-Resonant PSR CC/CV PWM Power Switch |
| DP1804 | Quasi-Resonant PSR CC/CV PWM Power Switch |