DX10N60F Description
These N-channel MOSFET are produced using advanced DeXin’s MOSFET Technology, which provides low on- state resistance,rugged avalanche, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.
DX10N60F Key Features
- VDS = 600V
- VDS = 660V @ Tjmax
- ID = 10A
- RDS(ON) ≤ 0.7Ω @ VGS = 10V