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P-Channel 30-V (D-S) MOSFET
DTM4407
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.016 at VGS = - 10 V 0.023 at VGS = - 4.5 V
ID (A)d - 11.6 - 10
Qg (Typ.) 22 nC
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
S G
D P-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Available • TrenchFET® Power MOSFET • 100 % Rg Tested • 100 % UIS Tested
APPLICATIONS • Load Switches
- Notebook PCs - Desktop PCs
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.