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DTM4602 Datasheet Preview

DTM4602 Datasheet

N- and P-Channel MOSFET

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N- and P-Channel 0 V (D-S) MOSFET
'70
ZZZGLQWHNMS
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
 at VGS = 10 V
N-Channel 0
 at VGS = 4.5 V
ID (A)a Qg (Typ.)

.

 at VGS = - 10 V - 
P-Channel - 0
 at VGS = - 4.5 V - 

FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Motor Drive
S1 1
G1 2
S2 3
G2 4
SO-8
8 D1
7 D1
6 D2
5 D2
D1
G1
S1
S2
G2
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage
VDS 0
- 0
Gate-Source Voltage
VGS
± 20
± 20
TC = 25 °C
 - 
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C
TA = 25 °C
ID

b, c
- 
- .6b, c
Pulsed Drain Current (10 μs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
TA = 70 °C
TC = 25 °C
TA = 25 °C
IDM
IS
ISM
.4b, c


1.6b, c
33
- .3b, c
- 
- 
- 1.6b, c
- 30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS

5
- 
20
TC = 25 °C
 
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
3
3b, c
3.1
3b, c
TA = 70 °C
2.28b, c
2.28b, c
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ. Max.
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t 10 s
Steady State
RthJA
RthJF
0 2.5
0 0
Notes:
a. Based on TC = 25 °C.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 120 °C/W (n-channel) and 110 °C/W (p-channel).
e. Package limited.
P-Channel
Typ.
7

Max.
2.5

Unit
V
A
mJ
W
°C
Unit
°C/W
1




Din-Tek

DTM4602 Datasheet Preview

DTM4602 Datasheet

N- and P-Channel MOSFET

No Preview Available !

'70
ZZZGLQWHNMS
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currentb
Drain-Source On-State Resistanceb
Forward Transconductanceb
Dynamica
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
RDS(on)
gfs
VGS = 0 V, ID = 250 μA
VGS = 0 V, ID = - 250 μA
ID = 250 μA
ID = - 250 μA
ID = 250 μA
ID = - 250 μA
VDS = VGS, ID = 250 μA
VDS = VGS, ID = - 250 μA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = 0 V
VDS = - 0 V, VGS = 0 V
VDS = 0 V, VGS = 0 V, TJ = 55 °C
VDS = - 0 V, VGS = 0 V, TJ = 55 °C
VDS = 5 V, VGS = 10 V
VDS = - 5 V, VGS = - 10 V
VGS = 10 V, ID = .8 A
VGS = - 10 V, ID = -  A
VGS = 8 V, ID = .7 A
VGS = - 8 V, ID = - .5 A
VGS = 4.5 V, ID = .6 A
VGS = - 4.5 V, ID = -  A
VDS = 15 V, ID = .8 A
VDS = - 15 V, ID = - .7 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
N-Channel
VDS = 20 V, VGS = 0 V, f = 1 MHz
P-Channel
VDS = - 20 V, VGS = 0 V, f = 1 MHz
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS = 20 V, VGS = 10 V, ID = 10 A
Qg VDS = - 20 V, VGS = - 10 V, ID = - 10 A
N-Channel
VDS = 20 V, VGS = 4.5 V, ID = 10 A
Qgs
P-Channel
Qgd VDS = - 20 V, VGS = - 4.5 V, ID = - 10 A
Gate Resistance
Rg f = 1 MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min.
0
- 0
1
- 

- 
0.3
1.3
Typ.a Max. Unit
V
30
- 4
- 4.1
5
mV/°C
2.2
- 2.5
± 100
± 100
1
-1
10
- 10
V
nA
μA
A














Ω
S


5



13.3

6.5
21.7
2.3
5.6
1.7
9.8
1.3
6.4
20

10
33
2.6
12.8
pF
nC
Ω
2


Part Number DTM4602
Description N- and P-Channel MOSFET
Maker Din-Tek
Total Page 14 Pages
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