DTP7N50SJ Description
DTP7N50SJ/DTP7N50FSJ/DTU7N50SJ/DTL7N50SJ ZZZGLQWHNMS /$IBOOFM507 %4 4VQFS+VODUJPOPower MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 52 13 18 Single.
DTP7N50SJ Key Features
- Low Gate Charge Qg Results in Simple Drive Requirement
- Improved Gate, Avalanche and Dynamic dV/dt RoHS
- Fully Characterized Capacitance and Avalanche Voltage and Current
- Effective Coss Specified
- pliant to RoHS directive 2002/95/EC