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N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0093 at VGS = 10 V 0.0122 at VGS = 4.5 V ID (A)a 55 50 FEATURES • 175 °C Jun

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N-Channel 60 V (D-S) MOSFET DTQ3608 www.din-tek.jp PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.0113 at VGS = 10 V 0.0143 at VGS = 4.5 V ID (A)a, e 3

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Hear Aiding MEMS Microphone ZTS6554 DESCRIPTION The ZTS6554 is a high quality, low voltage, low power analog output bottom-ported omni-directional M

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Power MOSFET PRODUCT SUMMARY VDS (V) 650 RDS(on) (Ω)

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DTK20N60SJ www.din-tek.jp N-Channel 600-V (D-S) Super Junction MOSFET PRODUCT SUMMARY VDS at TJ max. (V) 600 RDS(on) max. at 25 °C (Ω) VGS = 10 V

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P-Channel 60-V (D-S) MOSFET DTM6601 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 60 RDS(on) () 0.024 at VGS = - 10 V 0.031 at VGS = - 4.5 V ID (A)a

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P-Channel 30-V (D-S) MOSFET DTM4415 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.0092 at VGS = - 10 V 0.0128 at VGS = - 4.5 V ID (A

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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max

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N- and P-Channel 0 V (D-S) MOSFET '70  ZZZGLQ WHNMS PRODUCT SUMMARY VDS (V) RDS(on) (Ω)   at VGS = 10 V N-Channel 0   at VGS = 4.

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DTP11N60SJ/DTP11N60FSJ/DTU11N60SJ/DTL11N60SJ www.din-tek.jp N-Channel 600V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. 600

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and short circuit ruggedness. It is designed fo

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N-Channel 30 V (D-S) MOSFET '78 1S ZZZGLQ WHNMS PRODUCT SUMMARY VDS (V)  RDS(on) (:)  DW9*6 9  DW9*6 9 ID (A) G

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Dual N-Channel MOSFET DTS8205 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.018 at VGS = 4.5 V 0.023 at VGS = 2.5 V ID (A) 5.6 4.5 FEA

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N-Channel 20 V (D-S) MOSFET DTS2314 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.017 at VGS = 4.5 V 20 0.021 at VGS = 2.5 V 0.028 at VGS

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DTJ16A60/DTJ16A80 www.din-tek.jp 3 Quadrants Standard TRIAC FEATURES  Repetitive Peak Off-State Voltage : 600V/800V  R.M.S On–State Current (IT(RMS

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N-Channel 30 V (D-S) MOSFET DTQ6300 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) (mΩ )(Typ.) 30 1.7 at VGS = 10 V 2.4 at VGS = 4.5 V ID (A)a

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N-Channel 100 V (D-S) MOSFET DTK18510 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 100 0.0022 at VGS = 10 V 0.0026 at VGS = 7.5 V ID

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P-Channel 100 V (D-S) MOSFET DTP9803 www.din-tek.jp PRODUCT SUMMARY VDS (V) - 100 RDS(on) () Max. 0.214 at VGS = - 10 V 0.221 at VGS = - 4.5 V I

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P-Channel 30 V (D-S) MOSFET DTP9531 www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0078 at VGS = - 10 V - 30 0.0082 at VGS = - 6 V 0

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Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on)

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