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Dual P-Channel 30-V (D-S) MOSFET
DTM4951
www.din-tek.jp
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
- 30 0.029 at VGS = - 10 V 0.039 at VGS = - 4.5 V
ID (A)d, e - 7.3 - 6.3
Qg (Typ.) 17 nC
FEATURES • Halogen-free • TrenchFET® Power MOSFET • 100 % UIS Tested
APPLICATIONS • Load Switches
RoHS
COMPLIANT
S1 1 G1 2 S2 3 G2 4
SO-8 Top View
8 D1 7 D1 6 D2 5 D2
S1 S2 G1 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
Pulsed Drain Current
TA = 70 °C
IDM
Continuous Source-Drain Diode Current
Avalanche Current Single-Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.