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DTM4953 - Dual P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • AEC-Q101 Qualifiedc.
  • 100 % Rg and UIS Tested  DTM4953 www. din-tek. jp S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 G1 6 D2 5 D2 S1 G2 S2 D1 D2 P-Channel MOSFET P-Channel MOSFET.

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Datasheet Details

Part number DTM4953
Manufacturer Din-Tek
File Size 349.66 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet DTM4953 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Dual P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) per leg Configuration - 30 0.046 0.078 -5.4 Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested  DTM4953 www.din-tek.jp S1 1 G1 2 S2 3 G2 4 SO-8 Top View 8 D1 7 D1 G1 6 D2 5 D2 S1 G2 S2 D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.