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DTM4953BDY - Dual P-Channel MOSFET

Key Features

  • TrenchFET® Power MOSFET.
  • AEC-Q101 Qualifiedc.
  • 100 % Rg and UIS Tested  SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View S1 S2 G1 G2 D1 D2 P-Channel MOSFET P-Channel MOSFET.

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Datasheet Details

Part number DTM4953BDY
Manufacturer Din-Tek
File Size 353.51 KB
Description Dual P-Channel MOSFET
Datasheet download datasheet DTM4953BDY Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DTM4953BDY Dual P-Channel 30 V (D-S) MOSFET www.din-tek.jp PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) per leg Configuration - 30 0.042 0.055 -6.6 Dual FEATURES • TrenchFET® Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested  SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 Top View S1 S2 G1 G2 D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC = 25 °C TC = 125 °C ID Continuous Source Current (Diode Conduction) IS Pulsed Drain Currenta IDM Single Pulse Avalanche Current Single Pulse Avalanche Energy L = 0.