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P-Channel 40 V (D-S) MOSFET
DTM4957
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) - 40
RDS(on) () 0.010 at VGS = - 10 V 0.014 at VGS = - 4.5 V
ID (A)a - 16.1 - 13.3
Qg (Typ.) 33 nC
S1 S2 S3 G4
SO-8 Top View
8D 7D 6D 5D
S G
D P-Channel MOSFET
FEATURES • Halogen-free According to IEC 61249-2-21
Definition
• 100 % Rg Tested • 100 % UIS Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switch • POL
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
Continous Source-Drain Diode Current
Single Pulse Avalanche Current Single Pulse Avalanche Energy
TC = 25 °C TA = 25 °C
L = 0.