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DTL1N60/DTP1N60/DTU1N60
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 14 2.7 8.1 Single 600 7
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FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Available in Tape and Reel • Fast Switching • Ease of Paralleling • Compliant to RoHS Directive 2002/95/EC
TO-220AB
D
DPAK (TO-252)
D D
IPAK (TO-251)
G
G S G D S
G D S Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Currenta VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID LIMIT 600 ± 20 1.4 0.89 0.28 0.020 93 1.4 3.6 36 2.5 3.8 - 55 to + 150 260d UNIT V
A
Pulsed Drain IDM5.