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N-Channel 100 V (D-S) MOSFET
DTU10N10
www.din-tek.jp
PRODUCT SUMMARY
VDS (V) 100
RDS(on) () 0.145 at VGS = 10 V
ID (A) 10
TO-252
FEATURES • TrenchFET® Power MOSFETS • 175 °C Junction Temperature • 100 % Rg Tested
APPLICATIONS • Primary Side Switch
D
GDS Top View
G S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)b
TC = 25 °C TC = 125 °C
ID
Pulsed Drain Current
IDM
Continuous Source Current (Diode Conduction)
IS
Avalanche Current
IAR
Repetitive Avalanche Energy (Duty Cycle 1 %)
L = 0.1 mH
EAR
Maximum Power Dissipation
TC = 25 °C TA = 25 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
100
± 20 10 5.
DTU10N10 Datasheet
