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DTL10N20/DTU10N20
www.din-tek.jp
N-Channel 200 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 200
RDS(on) () Max. 0.45 at VGS = 10 V 0.47 at VGS = 4.5 V
TO-252
ID (A) 10 6.2
Qg (Typ.) 15
TO-251
FEATURES • TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested • Material categorization:
APPLICATIONS
• DC/DC Converters • DC/AC Inverters • Motor Drives
D
G
GD S Top View
GDS Top View
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (t = 300 µs) Avalanche Current Single Avalanche Energya Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TC = 25 °C TC = 70 °C
L = 0.
DTU10N20 Datasheet
